BSC011N03LSTATMA1 vs ISC011N04NM7VATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSC011N03LSTATMA1 tarafından Infineon ve ISC011N04NM7VATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSC011N03LSTATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | NRND | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 39 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 1.1 mOhm (typical 0.9 mOhm) | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) typ | 72 nC | — |
| Power Dissipation at TA=25C | 3 W | — |
| Power Dissipation at TC=25C | 115 W | — |
| İşletim Jant Sıcaklığı | -55C to +150C | — |
| Paket | PG-TDSON-8 FL (8-pin, exposed drain pad) | PG-TDSON-8 (source-down) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | Trench MOSFET, silicon |
| Configuration | Single with built-in diode | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| RoHS Durumu | Compliant | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |