BSC014N04LSATMA1 vs BSC155N06NDATMA1 Perbandingan
Perbandingan bersamaan detil BSC014N04LSATMA1 dari Infineon dan BSC155N06NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC014N04LSATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Rentang Suhu Kerja | -55C to +175C | -55 C to +175 C |
| Paket | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 3 (N-channel trench) |
| Status RoHS | Compliant | Compliant (Pb-free plating) |
| Level MSL | 1 (unlimited) | 1 |
| Part Number | — | BSC155N06NDATMA1 |
| Configuration | — | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |