BSC014N04LSTATMA1 vs BSC016N06NSTATMA1 Perbandingan

Perbandingan bersamaan detil BSC014N04LSTATMA1 dari Infineon dan BSC016N06NSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC014N04LSTATMA1 BSC016N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 BSC016N06NSTATMA1
Technology OptiMOS 5 (N-Channel Trench) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
Rentang Suhu Kerja -55°C to +150°C -55 C to +150 C
Paket PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Status RoHS Compliant Compliant
Level MSL MSL1 [DATA_NEEDED: MSL level]
Lead-Free Yes Yes
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Series — OptiMOS

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