BSC014N04LSTATMA1 vs BSC016N06NSTATMA1 比較

詳細並排比較 BSC014N04LSTATMA1 由 Infineon 與 BSC016N06NSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 啟用中
Infineon
BSC016N06NSTATMA1 BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 ✓ 啟用中

規格比較

參數 BSC014N04LSTATMA1 BSC016N06NSTATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC014N04LSTATMA1 BSC016N06NSTATMA1
Technology OptiMOS 5 (N-Channel Trench) OptiMOS 5
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) @ TA=25°C 33 A —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R DS(on) max @ VGS=10V 1.45 mΩ —
R DS(on) typical @ VGS=10V [DATA_NEEDED: RDS(on) typical] —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 115 W —
工作溫度範圍 -55°C to +150°C -55 C to +150 C
封裝 PG-TDSON-8 FL (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
腳位數 8 —
RoHS 狀態 Compliant Compliant
MSL 等級 MSL1 [DATA_NEEDED: MSL level]
Lead-Free Yes Yes
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 31 A
On-Resistance RDS(on) max (VGS=10V) — 1.6 mOhm
Power Dissipation (Tc) — 167 W
Power Dissipation (Ta) — 3 W
Series — OptiMOS

資料表與資源

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