BSC016N06NSTATMA1 vs BSC098N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC016N06NSTATMA1 dari Infineon dan BSC098N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC016N06NSTATMA1 BSC098N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A 60 A
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W 2.5 W
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C [DATA_NEEDED: Tj min/max]
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Series OptiMOS —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc=25C) — 69 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
Shipping Packaging — Tape & Reel (T/R)

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