BSC016N06NSTATMA1 vs BSC098N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSTATMA1 disebabkan oleh Infineon dan BSC098N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC016N06NSTATMA1 BSC098N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5 (N-channel trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A 60 A
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W 2.5 W
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C [DATA_NEEDED: Tj min/max]
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Series OptiMOS —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID Ta-rated value]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max @ VGS=10V — 9.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc=25C) — 69 W
Diode Continuous Forward Current (IS) — 63 A (Tc=25C)
Diode Pulse Current (IS,pulse) — 240 A (Tc=25C)
Diode Forward Voltage (VSD) typ — 0.9 V (IF=30 A, Tj=25C)
Diode Forward Voltage (VSD) max — 1.1 V (IF=30 A, Tj=25C)
Shipping Packaging — Tape & Reel (T/R)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga