BSC019N04NSGATMA1 vs IPD135N03LGATMA1 Perbandingan
Perbandingan bersamaan detil BSC019N04NSGATMA1 dari Infineon dan IPD135N03LGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC019N04NSGATMA1 | IPD135N03LGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max at VGS=10V | 2.5 mΩ | — |
| RDS(on) typ at VGS=10V | 1.9 mΩ | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| Power Dissipation (PD) at TC=25C | 125 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55°C to +175°C (TJ max typical for OptiMOS) |
| Paket | PG-TDSON-8-1 (TDSON-8 FL) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ |
| Continuous Drain Current (ID) | — | 30 A (Tc) |
| Power Dissipation (PD) | — | 31 W (Tc) |
| Paket / Case | — | PG-TO252-3 (DPAK), Surface Mount |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Gate Charge (Qg) | — | Ultra-low (per OptiMOS™ family spec) |
| Output Charge (Qoss) | — | Ultra-low (per OptiMOS™ family spec) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free Finish | — | Yes |
| Qualification | — | Industrial (Infineon OptiMOS™ standard grade) |