BSC019N04NSGATMA1 vs IPD135N03LGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N04NSGATMA1 disebabkan oleh Infineon dan IPD135N03LGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC019N04NSGATMA1 IPD135N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS (trench) —
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=10V 2.5 mΩ —
RDS(on) typ at VGS=10V 1.9 mΩ —
Gate-Source Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TA=25C 2.5 W —
Power Dissipation (PD) at TC=25C 125 W —
Gambaran Suhu Operasi -55C to +150C -55°C to +175°C (TJ max typical for OptiMOS)
Kemasan PG-TDSON-8-1 (TDSON-8 FL) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS™
Continuous Drain Current (ID) — 30 A (Tc)
Power Dissipation (PD) — 31 W (Tc)
Kemasan / Case — PG-TO252-3 (DPAK), Surface Mount
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Gate Charge (Qg) — Ultra-low (per OptiMOS™ family spec)
Output Charge (Qoss) — Ultra-low (per OptiMOS™ family spec)
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free Finish — Yes
Qualification — Industrial (Infineon OptiMOS™ standard grade)

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