BSC022N04LS6ATMA1 vs BSC014N04LSIATMA1 Perbandingan
Perbandingan bersamaan detil BSC022N04LS6ATMA1 dari Infineon dan BSC014N04LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC022N04LS6ATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-1) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Jumlah Pin | 8 | — |
| Suhu Kerja | -55 C to +175 C (junction) | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Rentang Suhu Kerja | — | -55 C to +150 C |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |