BSC027N06LS5ATMA1 vs IPD60R280P7SAUMA1 Perbandingan

Perbandingan bersamaan detil BSC027N06LS5ATMA1 dari Infineon dan IPD60R280P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC027N06LS5ATMA1 IPD60R280P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 CoolMOS P7 (7th generation, 600 V)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) CoolMOS P7 Superjunction (SJ) N-channel
Drain-Source Voltage (VDS) 60 V 600 V
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level 4 V max @ ID = 190 µA
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket / Case PG-TDSON-8-7 (SuperSO8 5x6) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Paket — PG-TO252-3 (DPAK)
Level MSL — 1
Integrated ESD Protection — Yes

Spek dan Sumber

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