BSC027N06LS5ATMA1 vs IPD60R280P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N06LS5ATMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N06LS5ATMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 CoolMOS P7 (7th generation, 600 V)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) CoolMOS P7 Superjunction (SJ) N-channel
Drain-Source Voltage (VDS) 60 V 600 V
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level 4 V max @ ID = 190 µA
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging / Kaso PG-TDSON-8-7 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Packhaging — PG-TO252-3 (DPAK)
Level ng MSL — 1
Integrated ESD Protection — Yes

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