BSC027N06LS5ATMA1 vs IPD60R280P7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N06LS5ATMA1 disebabkan oleh Infineon dan IPD60R280P7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC027N06LS5ATMA1 IPD60R280P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 CoolMOS P7 (7th generation, 600 V)
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) CoolMOS P7 Superjunction (SJ) N-channel
Drain-Source Voltage (VDS) 60 V 600 V
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level 4 V max @ ID = 190 µA
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Gambaran Suhu Operasi -55°C to +150°C —
Kemasan / Case PG-TDSON-8-7 (SuperSO8 5x6) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Continuous Drain Current (ID, Tc) — 12 A
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Kemasan — PG-TO252-3 (DPAK)
Aras MSL — 1
Integrated ESD Protection — Yes

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