BSC027N10NS5ATMA1 vs BSC0902NSATMA1 Perbandingan
Perbandingan bersamaan detil BSC027N10NS5ATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSC027N10NS5ATMA1 | BSC0902NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | NRND | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 214 W | 48 W |
| Paket | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | -55C to +150C (Tj) |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | JEDEC qualified for target applications |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Bebas Halogen | — | Yes, per IEC 61249-2-21 |
| Avalanche Rated | — | Yes (100% avalanche tested) |