BSC027N10NS5ATMA1 vs BSC0902NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC027N10NS5ATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC027N10NS5ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup NRND Aktif
Manufacturer Infineon Technologies —
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 30 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 214 W 48 W
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] -55C to +150C (Tj)
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) JEDEC qualified for target applications
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
RoHS Compliance — Compliant (Pb-free lead plating)
Boson Bebas — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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