BSC027N10NS5ATMA1 vs BSC0902NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N10NS5ATMA1 sa pamamagitan ng Infineon at BSC0902NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC027N10NS5ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle NRND Aktibo
Manufacturer Infineon Technologies —
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 30 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 214 W 48 W
Packhaging PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj min/max] -55C to +150C (Tj)
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) JEDEC qualified for target applications
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
RoHS Compliance — Compliant (Pb-free lead plating)
Wala sa Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

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