BSC040N10NS5ATMA1 vs IPB017N10N5LFATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N10NS5ATMA1 dari Infineon dan IPB017N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N10NS5ATMA1 IPB017N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V 100 V
Maximum On-Resistance (RDS(on)) 4 mOhm —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) max 136 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 139 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C -55C to +175C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Capacitance Reduction Up to 44% vs previous generation —
RDS(on) Reduction Up to 43% vs previous generation —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per Infineon OptiMOS 5 family) —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 Linear FET
Continuous Drain Current (ID) @ TC=25C — 180 A
Continuous Drain Current (ID) @ TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD) @ TC=25C — 313 W
Drain-Source On-Resistance (RDS(on)) @ VGS=10V — 1.7 mΩ (max)
Gate-Source Voltage (VGS) Max — ±20 V
Paket / Case — PG-TO263-7 (D2PAK-7), surface mount
Level MSL — 1 (unlimited)
Avalanche Rated — Yes
Linear-Mode (SOA) Optimized — Yes (OptiMOS Linear FET)

Spek dan Sumber

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