BSC040N10NS5ATMA1 vs IPB017N10N5LFATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC040N10NS5ATMA1 sa pamamagitan ng Infineon at IPB017N10N5LFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 ✓ NakahandaInfineon
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC040N10NS5ATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Maximum On-Resistance (RDS(on)) | 4 mOhm | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) max | 136 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 139 W | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +175C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Output Capacitance Reduction | Up to 44% vs previous generation | — |
| RDS(on) Reduction | Up to 43% vs previous generation | — |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (per Infineon OptiMOS 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Linear FET |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Packhaging / Kaso | — | PG-TO263-7 (D2PAK-7), surface mount |
| Level ng MSL | — | 1 (unlimited) |
| Avalanche Rated | — | Yes |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |