BSC040N10NS5ATMA1 vs IPB017N10N5LFATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC040N10NS5ATMA1 disebabkan oleh Infineon dan IPB017N10N5LFATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC040N10NS5ATMA1 IPB017N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 5 MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V 100 V
Maximum On-Resistance (RDS(on)) 4 mOhm —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) max 136 A —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 139 W —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C -55C to +175C (junction)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Output Capacitance Reduction Up to 44% vs previous generation —
RDS(on) Reduction Up to 43% vs previous generation —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (per Infineon OptiMOS 5 family) —
Manufacturer — Infineon Technologies
Series — OptiMOS 5 Linear FET
Continuous Drain Current (ID) @ TC=25C — 180 A
Continuous Drain Current (ID) @ TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD) @ TC=25C — 313 W
Drain-Source On-Resistance (RDS(on)) @ VGS=10V — 1.7 mΩ (max)
Gate-Source Voltage (VGS) Max — ±20 V
Kemasan / Case — PG-TO263-7 (D2PAK-7), surface mount
Aras MSL — 1 (unlimited)
Avalanche Rated — Yes
Linear-Mode (SOA) Optimized — Yes (OptiMOS Linear FET)

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