BSC042NE7NS3GATMA1 vs IAUZ40N06S5L050ATMA1 Perbandingan

Perbandingan bersamaan detil BSC042NE7NS3GATMA1 dari Infineon dan IAUZ40N06S5L050ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC042NE7NS3GATMA1 IAUZ40N06S5L050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC042NE7NS3GATMA1 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS 3 OptiMOS 5 (super-junction N-channel)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Ta 19 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Rentang Suhu Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant Compliant
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Spek dan Sumber

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