BSC042NE7NS3GATMA1 vs IAUZ40N06S5L050ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC042NE7NS3GATMA1 disebabkan oleh Infineon dan IAUZ40N06S5L050ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC042NE7NS3GATMA1 IAUZ40N06S5L050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSC042NE7NS3GATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS 3 OptiMOS 5 (super-junction N-channel)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Ta 19 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant Compliant
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

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