BSC042NE7NS3GATMA1 vs IAUZ40N06S5L050ATMA1 Comparison

Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Active

Specification Comparison

Parameter BSC042NE7NS3GATMA1 IAUZ40N06S5L050ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number BSC042NE7NS3GATMA1 —
Transistor Type N-Channel MOSFET —
Technology OptiMOS 3 OptiMOS 5 (super-junction N-channel)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at Ta 19 A —
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
Operating Temperature Range -55C to +150C —
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 —
RoHS Status Compliant Compliant
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Operating Junction Temperature — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Datasheets & Resources

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