BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 Perbandingan

Perbandingan bersamaan detil BSC0501NSIATMA1 dari Infineon dan IPC90N04S5L3R3ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0501NSIATMA1 IPC90N04S5L3R3ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V OptiMOS 5 40V
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Suhu Hubung Kerja -55C to +150C -55°C to +175°C
Paket PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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