BSC0501NSIATMA1 vs IPC90N04S5L3R3ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0501NSIATMA1 sa pamamagitan ng Infineon at IPC90N04S5L3R3ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0501NSIATMA1 BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon

BSC0501NSIATMA1 ✓ Nakahanda
Infineon
IPC90N04S5L3R3ATMA1 IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon

IPC90N04S5L3R3ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0501NSIATMA1 IPC90N04S5L3R3ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Infineon Technologies
Product Family OptiMOS 5 25V/30V OptiMOS 5 40V
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at Ta 29 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Power Dissipation at Ta (PD) 2.5 W —
Power Dissipation at Tc (PD) 50 W —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Temperature ng Junction na Operasyon -55C to +150C -55°C to +175°C
Packhaging PG-TDSON-8-6 (SuperSO8) PG-TDSON-8-34 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant —
Avalanche Rated Yes —
Technology Trench-gate OptiMOS 5 —
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TC=25°C — 90 A
On-Resistance RDS(on) max at VGS=10V — 3.3 mΩ
On-Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) — 1.7 V to 2.7 V (logic level)
Total Power Dissipation (TC=25°C) — 62 W
Storage Temperature Range — [DATA_NEEDED: storage temp range]
MSL Moisture Sensitivity — MSL1 (per JEDEC J-STD-020)
Peak Reflow Temperature — 260°C
Qualification — AEC-Q101 automotive qualified
Avalanche Tested — 100% (production-level)
RoHS Compliance — Compliant (Green Product)

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