BSC0502NSIATMA1 vs BSO220N03MDGXUMA1 Perbandingan
Perbandingan bersamaan detil BSC0502NSIATMA1 dari Infineon dan BSO220N03MDGXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSC0502NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 3M (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C (junction) |
| Paket | PG-TDSON-8 (SuperSO8 5x6) | PG-DSO-8 (SO-8 with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 3M |
| Configuration | — | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) | — | 7.7 A |
| On-State Resistance (R_DS(on)) | — | 22 mΩ max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | — | 1.4 W |
| Level MSL | — | 1 (unlimited) |
| Avalanche Rated | — | Yes |