BSC0502NSIATMA1 vs BSO220N03MDGXUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0502NSIATMA1 disebabkan oleh Infineon dan BSO220N03MDGXUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC0502NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 3M (Trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Continuous Drain Current (ID) at TA | 26 A | — |
| RDS(on) Max at VGS=10V | 2.3 mOhm | — |
| Gate Charge QG (0V to 4.5V) Typ | 9.0 nC | — |
| Output Charge QOSS Typ | 13.5 nC | — |
| Power Dissipation at TA (Ta=25C) | 2.5 W | — |
| Power Dissipation at TC (Tc=25C) | 43 W | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Kemasan | PG-TDSON-8 (SuperSO8 5x6) | PG-DSO-8 (SO-8 with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 3M |
| Configuration | — | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) | — | 7.7 A |
| On-State Resistance (R_DS(on)) | — | 22 mΩ max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | — | 1.4 W |
| Aras MSL | — | 1 (unlimited) |
| Avalanche Rated | — | Yes |