BSC0504NSIATMA1 vs BSZ060NE2LSATMA1 Perbandingan

Perbandingan bersamaan detil BSC0504NSIATMA1 dari Infineon dan BSZ060NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0504NSIATMA1 BSZ060NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
Paket PG-TDSON-8-6 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
Tegangan Batas Gerbang [DATA_NEEDED: gate threshold voltage] —
Tahanan Panas [DATA_NEEDED: thermal resistance] —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +150C
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
Status RoHS unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Part Number — BSZ060NE2LSATMA1
Technology — OptiMOS™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) @ Ta=25C — 12 A
Continuous Drain Current (ID) @ Tc=25C — 44 A
Pulsed Drain Current (IDM) — 44 A
On-Resistance RDS(on) max @ VGS=10V — 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 26 W
Level MSL — 1
Shipping Packaging — Tape & Reel

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