BSC050N03LSGATMA1 vs BSC120N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC050N03LSGATMA1 dari Infineon dan BSC120N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC050N03LSGATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC050N03LSGATMA1 —
Technology OptiMOS 3 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at Tc 80 A —
Continuous Drain Current (ID) at Ta 18 A —
On-State Resistance (RDS(on)) Max at VGS=10V 5 mOhm —
Power Dissipation (PD) at Tc 50 W —
Power Dissipation (PD) at Ta 2.5 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C -55C to +150C (TJ)
Channel Type N-Channel —
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — +/-20 V
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W

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