BSC050N03LSGATMA1 vs BSC120N03LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC050N03LSGATMA1 disebabkan oleh Infineon dan BSC120N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC050N03LSGATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC050N03LSGATMA1 —
Technology OptiMOS 3 (N-channel trench MOSFET) —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at Tc 80 A —
Continuous Drain Current (ID) at Ta 18 A —
On-State Resistance (RDS(on)) Max at VGS=10V 5 mOhm —
Power Dissipation (PD) at Tc 50 W —
Power Dissipation (PD) at Ta 2.5 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical value]
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C -55C to +150C (TJ)
Channel Type N-Channel —
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 3
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — +/-20 V
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W

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