BSC050N03LSGATMA1 vs BSC120N03LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC050N03LSGATMA1 sa pamamagitan ng Infineon at BSC120N03LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC050N03LSGATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC050N03LSGATMA1 | — |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 80 A | — |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical value] |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55C to +150C (TJ) |
| Channel Type | N-Channel | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |