BSC052N08NS5ATMA1 vs BSC077N12NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC052N08NS5ATMA1 dari Infineon dan BSC077N12NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC052N08NS5ATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC052N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Drain-Source Voltage (VDS) | 80 V | 120 V |
| Continuous Drain Current (ID, Tc) | 95 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 5.2 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage VGS(th) typ | 2.5-3.0 V | 2.5 V |
| Total Power Dissipation (Tc) | 83 W | — |
| Total Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubung Kerja | -55C to +150C | -55C to +150C |
| Paket | PG-TDSON-8 (SuperSO8) 5x6 mm | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | 1 |
| Part Family | — | OptiMOS 3 (120 V) |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta | — | 13.4 A |
| Continuous Drain Current (ID) at Tc | — | 98 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD) at Tc | — | 139 W |
| Jumlah Pin | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |