BSC059N04LSGATMA1 vs IAUZ40N06S5L050ATMA1 Perbandingan

Perbandingan bersamaan detil BSC059N04LSGATMA1 dari Infineon dan IAUZ40N06S5L050ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC059N04LSGATMA1 IAUZ40N06S5L050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 3 (N-channel trench MOSFET) OptiMOS 5 (super-junction N-channel)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 73 A —
Continuous Drain Current (ID, Ta=25C) 16 A —
On-State Resistance RDS(on) max @ VGS=10V 5.9 mOhm —
Power Dissipation (Tc=25C) 50 W —
Power Dissipation (Ta=25C) 2.5 W —
Gate-Source Threshold Voltage VGS(th) 1.2 V to 2.0 V (typ) —
Total Gate Charge Qg [DATA_NEEDED: Qg total, typical nC] —
Rentang Suhu Kerja -55 C to +150 C —
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
REACH Status Compliant —
Channel Type N-Channel —
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Spek dan Sumber

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