BSC059N04LSGATMA1 vs IAUZ40N06S5L050ATMA1 Comparison

Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and IAUZ40N06S5L050ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC059N04LSGATMA1 IAUZ40N06S5L050ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 3 (N-channel trench MOSFET) OptiMOS 5 (super-junction N-channel)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc=25C) 73 A —
Continuous Drain Current (ID, Ta=25C) 16 A —
On-State Resistance RDS(on) max @ VGS=10V 5.9 mOhm —
Power Dissipation (Tc=25C) 50 W —
Power Dissipation (Ta=25C) 2.5 W —
Gate-Source Threshold Voltage VGS(th) 1.2 V to 2.0 V (typ) —
Total Gate Charge Qg [DATA_NEEDED: Qg total, typical nC] —
Operating Temperature Range -55 C to +150 C —
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8-33 (TSDSON-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
REACH Status Compliant —
Channel Type N-Channel —
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Operating Junction Temperature — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Datasheets & Resources

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