BSC066N06NSATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil BSC066N06NSATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC066N06NSATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25°C 64 A —
Continuous Drain Current (ID) at TC=100°C 45 A —
Pulsed Drain Current (IDM) 256 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max) —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 26 nC (typ) [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25°C 46 W —
Power Dissipation (PD) at TA=25°C 2.5 W —
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W —
Suhu Hubung Kerja -55°C to +150°C —
Paket PG-TDSON-8-6 (TDSON EP) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Technology OptiMOS 5 60 V trench-gate OptiMOS 5
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Rentang Suhu Kerja — -55C to +150C

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