BSC066N06NSATMA1 vs BSC034N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC066N06NSATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ Active

Specification Comparison

Parameter BSC066N06NSATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at TC=25°C 64 A —
Continuous Drain Current (ID) at TC=100°C 45 A —
Pulsed Drain Current (IDM) 256 A [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) max ±20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 6.6 mΩ (max) —
Gate Threshold Voltage (VGS(th)) 1.7 V (typ) [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) 26 nC (typ) [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25°C 46 W —
Power Dissipation (PD) at TA=25°C 2.5 W —
Thermal Resistance, Junction-to-Case (RθJC) 1.3 °C/W —
Operating Junction Temperature -55°C to +150°C —
Package PG-TDSON-8-6 (TDSON EP) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Technology OptiMOS 5 60 V trench-gate OptiMOS 5
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Operating Temperature Range — -55C to +150C

Datasheets & Resources

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