BSC077N12NS3GATMA1 vs BSC042NE7NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC077N12NS3GATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC077N12NS3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Tipe Transistor | N-Channel MOSFET (enhancement-mode trench) | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | +/-20 V |
| Continuous Drain Current (ID) at Ta | 13.4 A | 19 A |
| Continuous Drain Current (ID) at Tc | 98 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | 125 W |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Technology | — | OptiMOS 3 |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Rentang Suhu Kerja | — | -55C to +150C |