BSC077N12NS3GATMA1 vs BSC093N15NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC077N12NS3GATMA1 dari Infineon dan BSC093N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC077N12NS3GATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 (120 V) —
Tipe Transistor N-Channel MOSFET (enhancement-mode trench) —
Drain-Source Voltage (VDS) 120 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta 13.4 A —
Continuous Drain Current (ID) at Tc 98 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-State Resistance RDS(on) max @ VGS=10V 7.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.5 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Tc 139 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-1 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TDSON-8-7)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Automotive Grade Yes (per Infineon part number suffix / datasheet) —
Technology — OptiMOS 5 150V
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Rentang Suhu Kerja — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Bebas Halogen — [DATA_NEEDED: halogen free status]

Spek dan Sumber

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