BSC084P03NS3GATMA1 vs BSC060P03NS3EGATMA1 Perbandingan
Perbandingan bersamaan detil BSC084P03NS3GATMA1 dari Infineon dan BSC060P03NS3EGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 ✓ AktifInfineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC084P03NS3GATMA1 | BSC060P03NS3EGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | -30 V |
| Continuous Drain Current (Ta) | 14.9 A | 17.7 A |
| Continuous Drain Current (Tc) | 78.6 A | 100 A |
| Rds(on) max @ VGS = -10 V | 6.1 mOhm | — |
| Rds(on) max @ VGS = -2.5 V | [DATA_NEEDED: Rds(on) at 2.5V] | — |
| Gate Threshold Voltage (VGS(th) typ) | -1.7 V | — |
| Total Gate Charge (Qg) | 58 nC @ VGS = -10 V | — |
| Input Capacitance (Ciss) | 3.19 nF | — |
| Output Capacitance (Coss) | 110 pF | — |
| Reverse Transfer Capacitance (Crss) | 1.52 nF | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 69 W | 83 W |
| Rentang Suhu Kerja | -55C to +150C | -55°C to +150°C |
| Paket | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology Family | OptiMOS P3 | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | — |
| Polarity | — | P-Channel |
| On-State Resistance RDS(on) max @ VGS=10V | — | 6 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | -2.5 V |
| Total Gate Charge Qg @ VGS=10V | — | 81 nC |
| Input Capacitance Ciss | — | 6.02 nF |
| Output Capacitance Coss | — | 2.81 nF |
| Reverse Transfer Capacitance Crss | — | 220 pF |
| Technology | — | OptiMOS™ P-channel Trench |