BSC084P03NS3GATMA1 vs BSC076N06NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC084P03NS3GATMA1 dari Infineon dan BSC076N06NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC084P03NS3GATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V 60 V
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 69 W
Rentang Suhu Kerja -55C to +150C -55C to +150C
Paket PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology Family OptiMOS P3 —
Status RoHS Compliant —
Level MSL 1 (unlimited) 1 (unlimited)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Technology — N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
RoHS Compliance — Compliant
Bebas Halogen — Yes (per Infineon product page)

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