BSC084P03NS3GATMA1 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC084P03NS3GATMA1 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC084P03NS3GATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -30 V 60 V
Continuous Drain Current (Ta) 14.9 A —
Continuous Drain Current (Tc) 78.6 A —
Rds(on) max @ VGS = -10 V 6.1 mOhm —
Rds(on) max @ VGS = -2.5 V [DATA_NEEDED: Rds(on) at 2.5V] —
Gate Threshold Voltage (VGS(th) typ) -1.7 V —
Total Gate Charge (Qg) 58 nC @ VGS = -10 V [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) 3.19 nF —
Output Capacitance (Coss) 110 pF —
Reverse Transfer Capacitance (Crss) 1.52 nF —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 69 W
Gambaran Suhu Operasi -55C to +150C -55C to +150C
Kemasan PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology Family OptiMOS P3 —
Status RoHS Compliant —
Aras MSL 1 (unlimited) 1 (unlimited)
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Technology — N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
RoHS Compliance — Compliant
Boson Bebas — Yes (per Infineon product page)

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