BSC0911NDATMA1 vs IPD031N03LGATMA1 Perbandingan

Perbandingan bersamaan detil BSC0911NDATMA1 dari Infineon dan IPD031N03LGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC0911NDATMA1 IPD031N03LGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A —
Power Dissipation (PD) 1 W —
Paket PG-TISON-8 (8-PowerTDFN) PG-TO252-3-11 (DPAK-2)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) -55 °C to +175 °C (junction)
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET MOSFET (Metal Oxide), OptiMOS 3
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] 1
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ 25 °C — 90 A (Tc)
Power Dissipation (Pd) — 94 W (Tc)
RDS(on) Max @ VGS=10V — 3.1 mΩ
RDS(on) Max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ 4.5V]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/max]
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg typical @ 10V Vgs]
Output Charge (Qoss) — Ultra low (per datasheet tagline)
Mounting Tab — Drain (electrically connected)
Avalanche Energy Rated — Yes (per OptiMOS 3 datasheet family)

Spek dan Sumber

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