BSC0911NDATMA1 vs IPD031N03LGATMA1 比較
詳細並排比較 BSC0911NDATMA1 由 Infineon 與 IPD031N03LGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0911NDATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | — |
| Power Dissipation (PD) | 1 W | — |
| 封裝 | PG-TISON-8 (8-PowerTDFN) | PG-TO252-3-11 (DPAK-2) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | -55 °C to +175 °C (junction) |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | MOSFET (Metal Oxide), OptiMOS 3 |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ 25 °C | — | 90 A (Tc) |
| Power Dissipation (Pd) | — | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | — | 3.1 mΩ |
| RDS(on) Max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 4.5 V, 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | — | Ultra low (per datasheet tagline) |
| Mounting Tab | — | Drain (electrically connected) |
| Avalanche Energy Rated | — | Yes (per OptiMOS 3 datasheet family) |