BSC098N10NS5ATMA1 vs BSC070N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC098N10NS5ATMA1 dari Infineon dan BSC070N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC098N10NS5ATMA1 BSC070N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25C) 60 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: typical Qg]
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W —
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 1 (per JEDEC J-STD-020)
Shipping Packaging Tape & Reel (T/R) —
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Rentang Suhu Hubung Kerja — -55 C to +150 C
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

Spek dan Sumber

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