BSC098N10NS5ATMA1 vs BSC070N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC098N10NS5ATMA1 disebabkan oleh Infineon dan BSC070N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC098N10NS5ATMA1 BSC070N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25C) 60 A —
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: typical Qg]
Power Dissipation (Tc=25C) 69 W —
Power Dissipation (Ta) 2.5 W —
Diode Continuous Forward Current (IS) 63 A (Tc=25C) —
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) —
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) —
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) —
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Kemasan PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 1 (per JEDEC J-STD-020)
Shipping Packaging Tape & Reel (T/R) —
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

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