BSC098N10NS5ATMA1 vs BSC070N10NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC098N10NS5ATMA1 sa pamamagitan ng Infineon at BSC070N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSC098N10NS5ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: typical Qg] |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |