BSC100N10NSFGATMA1 vs BSZ150N10LS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC100N10NSFGATMA1 dari Infineon dan BSZ150N10LS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC100N10NSFGATMA1 BSZ150N10LS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Paket PG-TDSON-8-1 (SuperSO8 5x6) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Status RoHS Compliant Compliant
Part Number — BSZ150N10LS3GATMA1
Technology / Family — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25 °C) — 40 A
On-Resistance RDS(on) max — 15 mΩ
Power Dissipation (TA=25 °C) — 2.1 W
Dissipasi Listrik (TC=25°C) — 63 W
Operating Temperature Range (TJ) — -55 °C to +150 °C
Gate Threshold VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow — Yes (lead-free, 260 °C peak reflow compatible)
Level MSL — [DATA_NEEDED: MSL moisture sensitivity level]

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