BSC100N10NSFGATMA1 vs BSZ150N10LS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC100N10NSFGATMA1 disebabkan oleh Infineon dan BSZ150N10LS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC100N10NSFGATMA1 BSZ150N10LS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6) PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
Status RoHS Compliant Compliant
Part Number — BSZ150N10LS3GATMA1
Technology / Family — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc=25 °C) — 40 A
On-Resistance RDS(on) max — 15 mΩ
Power Dissipation (TA=25 °C) — 2.1 W
Pembuangan Kuasa (TC=25°C) — 63 W
Operating Temperature Range (TJ) — -55 °C to +150 °C
Gate Threshold VGS(th) typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Lead-Free / Reflow — Yes (lead-free, 260 °C peak reflow compatible)
Aras MSL — [DATA_NEEDED: MSL moisture sensitivity level]

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