BSC265N10LSFGATMA1 vs BSC360N15NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC265N10LSFGATMA1 dari Infineon dan BSC360N15NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC265N10LSFGATMA1 BSC360N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) OptiMOS 3 (N-Channel Trench MOSFET)
Paket PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Rentang Suhu Kerja -55 C to +150 C (junction) -55°C to +150°C (junction)
Level MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes —
Series OptiMOS 2 —
Manufacturer — Infineon Technologies
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Avalanche Energy Rated — Yes

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