BSC265N10LSFGATMA1 vs BSC360N15NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC265N10LSFGATMA1 disebabkan oleh Infineon dan BSC360N15NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC265N10LSFGATMA1 BSC360N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) OptiMOS 3 (N-Channel Trench MOSFET)
Kemasan PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Gambaran Suhu Operasi -55 C to +150 C (junction) -55°C to +150°C (junction)
Aras MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes —
Series OptiMOS 2 —
Manufacturer — Infineon Technologies
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Avalanche Energy Rated — Yes

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