BSC520N15NS3G vs BSC360N15NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSC520N15NS3G dari Infineon dan BSC360N15NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC520N15NS3G BSC360N15NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC520N15NS3 G BSC360N15NS3GATMA1
Technology OptiMOS 3 (trench-gate N-channel) OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) max 150 V —
Continuous Drain Current (ID) max at TC=25C 21 A —
On-Resistance RDS(on) max 52 mΩ at VGS=10 V —
Power Dissipation (Ptot) at TC=25C 57 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
JEDEC Qualification Qualified per JEDEC —
Channel Type N-Channel (normal level) —
Typical Application DC-DC conversion, synchronous rectification —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Rentang Suhu Kerja — -55°C to +150°C (junction)
Avalanche Energy Rated — Yes
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — 1

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