BSL316CH6327XTSA1 vs BSL215CH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSL316CH6327XTSA1 dari Infineon dan BSL215CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSL316CH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | — |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | Half-bridge (1 N + 1 P) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Paket | PG-TSOP6-6 (TSOP6, 6-pin) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (junction) | -55C to +150C |
| Technology | OptiMOS low-voltage MOSFET | OptiMOS trench MOSFET |
| Channel Type | N-channel + P-channel (dual) | — |
| Jumlah Pin | 6 | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel and P-Channel Complementary Pair |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Paket / Case | — | PG-TSOP6-6 (6-pin TSOP) |
| Lead-Free | — | Yes |